vishay siliconix sia417dj new product document number: 74637 s-80437-rev. b, 03-mar-08 www.vishay.com 1 p-channel 8-v (d-s) mosfet features ? halogen-free ? trenchfet ? power mosfet ? new thermally enhanced powerpak ? sc-70 package - small footprint area - low on-resistance applications ? load switch, pa switch for portable devices product summary v ds (v) r ds(on) ( )i d (a) q g (typ.) - 8 0.023 at v gs = - 4.5 v - 12 a 19 nc 0.031 at v gs = - 2.5 v - 12 a 0.040 at v gs = - 1.8 v - 12 a 0.058 at v gs = - 1.5 v - 12 a 0.095 at v gs = - 1.2 v - 12 a s g d p- c hannel m os fet powerpak sc-70-6l-single 6 5 4 1 2 3 d d d d g s s 2.05 mm 2.05 mm markin g code x x x b h x lot tracea b ility and date code part # code orderin g information: SIA417DJ-T1-GE3 (lead (p b )-free and halogen-free) notes: a. package limited b. surface mounted on 1" x 1" fr4 board. c. t = 5 s. d. see solder profile ( http://www.vishay.com/ppg?73257 ). the powerpak sc-70 is a leadless package. the end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. a solder fillet at the exposed copper tip cannot b e guaranteed and is not required to ensure adequat e bottom side solder interconnection. e. rework conditions: manual soldering with a sold ering iron is not recommended for leadless components. f. maximum under steady state conditions is 80 c/w. absolute maximum ratings t a = 25 c, unless otherwise noted parameter symbol limit unit drain-source voltage v ds - 8 v gate-source voltage v gs 5 continuous drain current (t j = 150 c) t c = 25 c i d - 12 a a t c = 70 c - 12 a t a = 25 c - 12 a, b, c t a = 70 c - 8.3 b, c pulsed drain current i dm - 30 continuous source-drain diode current t c = 25 c i s - 12 a t a = 25 c - 2.9 b, c maximum power dissipation t c = 25 c p d 19 w t c = 70 c 12 t a = 25 c 3.5 b, c t a = 70 c 2.2 b, c operating junction and storage temperature range t j , t stg - 55 to 150 c soldering recommendations (peak temperature) d, e 260 thermal resistance ratings parameter symbol typical maximum unit maximum junction-to-ambient b, f t 5 s r thja 28 36 c/w maximum junction-to-case (drain) steady state r thjc 5.3 6.5 rohs compliant
www.vishay.com 2 document number: 74637 s-80437-rev. b, 03-mar-08 vishay siliconix sia417dj new product notes: a. pulse test; pulse width 300 s, duty cycle 2 %. b. guaranteed by design, not s ubject to production testing. stresses beyond those listed under ?absolute maximum ratings? ma y cause permanent damage to the device. these are stress rating s only, and functional operation of the device at these or any other condit ions beyond those indicated in the operational sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended periods may affect device reliability. specifications t j = 25 c, unless otherwise noted parameter symbol test conditions min. typ. max. unit static drain-source breakdown voltage v ds v gs = 0 v, i d = - 250 a - 8 v v ds temperature coefficient v ds /t j i d = - 250 a - 7.3 mv/c v gs(th) temperature coefficient v gs(th) /t j 2.5 gate-source threshold voltage v gs(th) v ds = v gs , i d = - 250 a - 0.35 - 1 v gate-source leakage i gss v ds = 0 v, v gs = 5 v 100 na zero gate voltage drain current i dss v ds = - 8 v, v gs = 0 v - 1 a v ds = - 8 v, v gs = 0 v, t j = 55 c - 10 on-state drain current a i d(on) v ds - 5 v, v gs = - 4.5 v - 10 a drain-source on-state resistance a r ds(on) v gs = - 4.5 v, i d = - 7 a 0.019 0.023 v gs = - 2.5 v, i d = - 6 a 0.026 0.031 v gs = - 1.8 v, i d = - 5.3 a 0.033 0.040 v gs = - 1.5 v, i d = - 1.7 a 0.043 0.058 v gs = - 1.2 v, i d = - 1.1 a 0.063 0.095 forward transconductance a g fs v ds = - 4 v, i d = - 7 a 23 s dynamic b input capacitance c iss v ds = - 4 v, v gs = 0 v, f = 1 mhz 1600 pf output capacitance c oss 500 reverse transfer capacitance c rss 320 total gate charge q g v ds = - 4 v, v gs = - 5 v, i d = - 10 a 21 32 nc v ds = - 4 v, v gs = - 4.5 v, i d = - 10 a 19 29 gate-source charge q gs 2.2 gate-drain charge q gd 5 gate resistance r g f = 1 mhz 8 tu r n - o n d e l ay t i m e t d(on) v dd = - 4 v, r l = 0.5 i d ? - 8.3 a, v gen = - 4.5 v, r g = 1 15 25 ns rise time t r 25 38 turn-off delay time t d(off) 80 120 fall time t f 45 70 tu r n - o n d e l ay t i m e t d(on) v dd = - 4 v, r l = 0.5 i d ? - 8.3 a, v gen = - 5 v, r g = 1 10 15 rise time t r 12 20 turn-off delay time t d(off) 80 120 fall time t f 45 70 drain-source body diode characteristics continuous source-drain diode current i s t c = 25 c - 12 a pulse diode forward current i sm - 30 body diode voltage v sd i s = - 8.3 a, v gs = 0 v - 0.8 - 1.2 v body diode reverse recovery time t rr i f = - 8.3 a, di/dt = 100 a/s, t j = 25 c 60 90 ns body diode reverse recovery charge q rr 33 50 nc reverse recovery fall time t a 15 ns reverse recovery rise time t b 45
document number: 74637 s-80437-rev. b, 03-mar-08 www.vishay.com 3 vishay siliconix sia417dj new product typical characteristics 25 c, unless otherwise noted output characteristics on-resistance vs. drain current and gate voltage gate charge 0 5 10 15 20 25 30 0.0 0.5 1.0 1.5 2.0 2.5 3.0 v ds - drain-to-source voltage (v) v gs = 5 v thru 2 v - drain current (a) i d v gs = 1 v v gs = 1.5 v 0.00 0.02 0.04 0.06 0.0 8 0.10 0.12 0 5 10 15 20 25 30 i d - drain c u rrent (a) - on-resistance ( ) r ds(on) v gs = 4.5 v v gs = 2.5 v v gs = 1.2 v v gs = 1.5 v v gs = 1. 8 v i d = 10 a 0 1 2 3 4 5 0 5 10 15 20 25 q g - total gate charge (nc) - gate-to-source voltage (v) v gs v ds = 4 v v ds = 6.4 v transfer characteristics capacitance on-resistance vs. junction temperature v gs - gate-to-source voltage (v) 0 2 4 6 8 10 0.0 0.3 0.6 0.9 1.2 1.5 t c = 25 c - drain current (a) i d t c = 125 c t c = - 55 c c oss c rss v ds - drain-to-source voltage (v) 0 500 1000 1500 2000 2500 02468 c iss c - capacitance (pf) t j - j u nction temperat u re (c) 0.7 0. 8 0.9 1.0 1.1 1.2 1.3 1.4 - 50 - 25 0 25 50 75 100 125 150 r ds(on) - on-resistance ( n ormalized) i d = 7 a v gs = 4.5 v , 2.5 v , 1. 8 v , 1.5 v
www.vishay.com 4 document number: 74637 s-80437-rev. b, 03-mar-08 vishay siliconix sia417dj new product typical characteristics 25 c, unless otherwise noted soure-drain diode forward voltage threshold voltage 0 0.2 0.4 0.6 0.8 1.0 1.2 t j = 150 c 10 v sd - source-to-drain voltage (v) - source current (a) i s 1 t j = 25 c 100 t j - temperature (c) 0.1 0.2 0.3 0.4 0.5 0.6 0.7 - 50 - 25 0 25 50 75 100 125 150 i d = 250 a (v) v gs(th) on-resistance vs. gate-to-source voltage single pulse power, junction-to-ambient 125 c 25 c i d = 7 a v gs - gate-to-so u rce v oltage ( v ) 0.00 0.02 0.04 0.06 0.0 8 0.10 012345 - on-resistance ( ) r ds(on) po w er ( w ) time (s) 10 1000 0.1 0.01 0.001 100 1 0 5 10 15 20 25 30 safe operating area, junction-to-ambient 1 0.1 1 10 0.01 10 - drain c u rrent (a) i d 0.1 t a = 25 c single p u lse dc v ds - drain-to-so u rce v oltage ( v ) * v gs minim u m v gs at w hich r ds(on) is specified limited b y r ds(on) * 100 b v dss limited idm limited i d(on) limited 10 ms 1 ms 1 s 100 ms 10 s
document number: 74637 s-80437-rev. b, 03-mar-08 www.vishay.com 5 vishay siliconix sia417dj new product typical characteristics 25 c, unless otherwise noted * the power dissipation p d is based on t j(max) = 150 c, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. it is used to determine the current rating, when this rating falls below the package limit. current derating* 0 5 10 15 20 25 30 0 25 50 75 100 125 150 i d - drain current (a) t c - case temperature (c) package limited power derating 0 5 10 15 20 25 50 75 100 125 150 t c - case temperature (c) power dissipation (w)
www.vishay.com 6 document number: 74637 s-80437-rev. b, 03-mar-08 vishay siliconix sia417dj new product typical characteristics 25 c, unless otherwise noted vishay siliconix maintains worldwide manufacturing capability. products may be manufactured at one of several qualified locatio ns. reliability data for silicon technology and package reliability represent a composite of all qualified locations. for related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?74637. normalized thermal transient im pedance, junction-to-ambient 10 -3 10 -2 1 10 1000 10 -1 10 -4 100 0.2 0.1 0.05 0.02 s qu are w a v e p u lse d u ration (s) n ormalized effecti v e transient thermal impedance 1 0.1 0.01 single p u lse t 1 t 2 n otes: p dm 1. d u ty cycle, d = 2. per unit base = r thja = 65 c/ w 3. t jm - t a = p dm z thja (t) t 1 t 2 4. s u rface mo u nted d u ty cycle = 0.5 normalized thermal transient impedance, junction-to-case 10 -3 10 -2 10 -4 1 0.1 0.2 0.1 d u ty cycle = 0.5 s qu are w a v e p u lse d u ration (s) n ormalized effecti v e transient thermal impedance 0.02 single p u lse 0.05 10 -1
document number: 91000 www.vishay.com revision: 18-jul-08 1 disclaimer legal disclaimer notice vishay all product specifications and data are subject to change without notice. vishay intertechnology, inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, ?vishay?), disclaim any and all liability fo r any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. vishay disclaims any and all li ability arising out of the use or application of any product describ ed herein or of any information provided herein to the maximum extent permit ted by law. the product specifications do not expand or otherwise modify vishay?s terms and conditions of purcha se, including but not limited to the warranty expressed therein, which apply to these products. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of vishay. the products shown herein are not designed for use in medi cal, life-saving, or life-sustaining applications unless otherwise expressly indicated. customers using or selling vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify vishay for any damages arising or resulting from such use or sale. please contact authorized vishay personnel to obtain written terms and conditions regarding products designed for such applications. product names and markings noted herein may be trademarks of their respective owners.
|
